2002. 2. 1 1/5 semiconductor technical data 2N3904A epitaxial planar npn transistor revision no : 0 general purpose application. switching application. features low leakage current : i cex =50na(max.), i bl =50na(max.) @v ce =30v, v eb =3v. low saturation voltage : v ce(sat) =0.3v(max.) @i c =50ma, i b =5ma. low collector output capacitance : c ob =4pf(max.) @v cb =5v. complementary to 2n3906a. maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6 v collector current i c 200 ma base current i b 50 ma collector power dissipation ta=25 p c 625 mw tc=25 1.5 w junction temperature t j 150 storage temperature range t stg -55 150
characteristic symbol test condition min. typ. max. unit collector cut-off current i cex v ce =30v, v eb =3v - - 50 na base cut-off current i bl v ce =30v, v eb =3v - - 50 na collector-base breakdown voltage v (br)cbo i c =10 a, i e =0 60 - - v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 40 - - v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6.0 - - v dc current gain * h fe (1) v ce =1v, i c =0.1ma 40 - - h fe (2) v ce =1v, i c =1ma 70 - - h fe (3) v ce =1v, i c =10ma 100 - 300 h fe (4) v ce =1v, i c =50ma 60 - - h fe (5) v ce =1v, i c =100ma 30 - 60 collector-emitter saturation voltage * v ce(sat) 1 i c =10ma, i b =1ma - - 0.2 v v ce(sat) 2 i c =50ma, i b =5ma - - 0.3 base-emitter saturation voltage * v be(sat) 1 i c =10ma, i b =1ma 0.65 - 0.85 v v be(sat) 2 i c =50ma, i b =5ma - - 0.95 transition frequency f t v ce =20v, i c =10ma, f=100mhz 300 - - mhz collector output capacitance c ob v cb =5v, i e =0, f=1mhz - - 4.0 pf input capacitance c ib v be =0.5v, i c =0, f=1mhz - - 8.0 pf input impedance h ie v ce =10v, i c =1ma, f=1khz 1.0 - 10 k voltage feedback ratio h re 0.5 - 8.0 x10 -4 small-signal current gain h fe 100 - 400 collector output admittance h oe 1.0 - 40 noise figure nf v ce =5v, i c =0.1ma rg=1k , f=10hz 15.7khz - - 5.0 db switching time delay time t d - - 35 ns rise time t r - - 35 storage time t stg - - 200 fall time t f - - 50 2002. 2. 1 2/5 revision no : 0 electrical characteristics (ta=25 ) 2N3904A * pulse test : pulse width 300 s, duty cycle 2%.
2002. 2. 1 3/5 2N3904A revision no : 0
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